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NVD5862NT4G

NVD5862NT4G

18A, 60V, 0.0057OHM, N-CHANNEL,

NVD5862NT4G

NVD5862NT4G

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Part No :

NVD5862NT4G

Manufacturer
Rochester Electronics
Description
18A, 60V, 0.0057OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
492349 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 48A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6 pF @ 25 V
FET Feature:-
Power Dissipation (Max):4.1W (Ta), 115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5862NT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NVD5862NT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVD5862NT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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