18A, 60V, 0.0057OHM, N-CHANNEL,
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 98A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.7mOhm @ 48A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 82 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 4.1W (Ta), 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRFS4410ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
BSS205NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 2.5A SOT23-3 |
|
TPH3207WSTransphorm |
GANFET N-CH 650V 50A TO247-3 |
|
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |
|
RSJ650N10TLROHM Semiconductor |
MOSFET N-CH 100V 65A LPTS |
|
IXFH230N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 230A TO247AD |
|
IRF3805S-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |
|
IPS060N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
IRL620SPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
DMG2302UK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 |
|
BUK9535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
PMPB8XNXNexperia |
MOSFET N-CH 20V 10.1A 6DFN |