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PMPB8XNX

PMPB8XNX

MOSFET N-CH 20V 10.1A 6DFN

PMPB8XNX

PMPB8XNX

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Part No :

PMPB8XNX

Manufacturer
Nexperia
Description
MOSFET N-CH 20V 10.1A 6DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
622362 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:12mOhm @ 10.1A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1696 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.9W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
PMPB8XNX is available at GangBo-ic.com, Please review product page below for detailed information, including PMPB8XNX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PMPB8XNX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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