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RSJ650N10TL

RSJ650N10TL

Image is for reference, please contact us to get the real picture

Part No :

RSJ650N10TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 100V 65A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11139 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
RSJ650N10TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:65A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10780 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RSJ650N10TL is available at GangBo-ic.com, Please review product page below for detailed information, including RSJ650N10TL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RSJ650N10TL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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