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IPS060N03LGAKMA1

IPS060N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3

IPS060N03LGAKMA1

IPS060N03LGAKMA1

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Part No :

IPS060N03LGAKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 50A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
IPS060N03LGAKMA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.4 pF @ 15 V
FET Feature:-
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
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