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FQPF1N50

FQPF1N50

MOSFET N-CH 500V 900MA TO220F

FQPF1N50

FQPF1N50

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Part No :

FQPF1N50

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 900MA TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
122112 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
FQPF1N50 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF1N50 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF1N50 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF1N50 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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