X35 PB-F POWER MOSFET TRANSISTOR
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SUM110P06-08L-E3Vishay / Siliconix |
MOSFET P-CH 60V 110A TO263 |
|
BSC123N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 11A/55A TDSON |
|
RM20P30D3Rectron USA |
MOSFET P-CHANNEL 30V 20A 8DFN |
|
IRF7458PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |
|
BUK9M24-40EXRochester Electronics |
BUK9M24-40E - N-CHANNEL 40 V, 24 |
|
BSC12DN20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 11.3A 8TDSON |
|
STU10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
|
IPP90N06S404AKSA1Rochester Electronics |
MOSFET N-CH 60V 90A TO220-3 |
|
IPP048N04NGRochester Electronics |
IPP048N04 - 12V-300V N-CHANNEL P |
|
FDA28N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28A TO3PN |
|
DMP32D4SFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 400MA 3DFN |
|
BSC090N03LSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
RS3E135BNGZETBROHM Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |