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BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1

MOSFET N-CH 200V 11.3A 8TDSON

BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC12DN20NS3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 11.3A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12852 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
BSC12DN20NS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 100 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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