MOSFET N-CH 100V 64A TO263
OPTOISOLATOR 3.75KV TRANS 4-SSOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 32mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3620 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 357W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIS862ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 15.8A/52A PPAK |
|
TK6R7A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
SUM110P06-08L-E3Vishay / Siliconix |
MOSFET P-CH 60V 110A TO263 |
|
BSC123N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 11A/55A TDSON |
|
RM20P30D3Rectron USA |
MOSFET P-CHANNEL 30V 20A 8DFN |
|
IRF7458PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |
|
BUK9M24-40EXRochester Electronics |
BUK9M24-40E - N-CHANNEL 40 V, 24 |
|
BSC12DN20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 11.3A 8TDSON |
|
STU10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
|
IPP90N06S404AKSA1Rochester Electronics |
MOSFET N-CH 60V 90A TO220-3 |
|
IPP048N04NGRochester Electronics |
IPP048N04 - 12V-300V N-CHANNEL P |
|
FDA28N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28A TO3PN |
|
DMP32D4SFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 400MA 3DFN |