RES 3.32K OHM 0.5% 1/10W 0603
CAP CER 120PF 25V U2J 0402
DIODE SCHOTTKY 60V 2.4A DO220AA
GANFET 2 N-CHANNEL 60V 23A DIE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tj) |
Rds On (Max) @ Id, Vgs: | 4.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 30V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI1967DH-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 1.3A SC70-6 |
|
BSG0813NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/33A TISON8 |
|
TSM300NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
NTQD6866R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD8P05SM9AS2463Rochester Electronics |
8A, 50V, 0.300 OHM, P-CHANNEL |
|
SI4599DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
|
MSCSM120HM50CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
UPA2550T1H-T2-ATRochester Electronics |
POWER, 5A, 12V, P-CHANNEL MOSFET |
|
SI1026X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.305A SC89-6 |
|
PMCXB900UEZNexperia |
MOSFET N/P-CH 20V 600/500MA 6DFN |
|
FDMD8580Sanyo Semiconductor/ON Semiconductor |
MOSFET 80V 16A POWER 5X6 |
|
IPG20N06S2L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 2A 8TDSON |
|
ZXMN2088DE6TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 1.7A SOT-26 |