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SI1026X-T1-GE3

SI1026X-T1-GE3

MOSFET 2N-CH 60V 0.305A SC89-6

SI1026X-T1-GE3

SI1026X-T1-GE3

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Part No :

SI1026X-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 60V 0.305A SC89-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
53216 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SI1026X-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:305mA
Rds On (Max) @ Id, Vgs:1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:30pF @ 25V
Power - Max:250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SC-89-6
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