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IPG20N06S2L35AATMA1

IPG20N06S2L35AATMA1

MOSFET 2N-CH 55V 2A 8TDSON

IPG20N06S2L35AATMA1

IPG20N06S2L35AATMA1

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Part No :

IPG20N06S2L35AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 55V 2A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14333 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
IPG20N06S2L35AATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Rds On (Max) @ Id, Vgs:35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:790pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
IPG20N06S2L35AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N06S2L35AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N06S2L35AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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