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C1E-27.000-10-50100-X1-CT

C1E-27.000-10-50100-X1-CT

CRYSTAL 27.0000MHZ 10PF SMD

BSG0813NDIATMA1

BSG0813NDIATMA1

MOSFET 2N-CH 25V 19A/33A TISON8

BSG0813NDIATMA1

BSG0813NDIATMA1

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Part No :

BSG0813NDIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 25V 19A/33A TISON8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
599159 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSG0813NDIATMA1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:19A, 33A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 12V
Power - Max:2.5W
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
BSG0813NDIATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSG0813NDIATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSG0813NDIATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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