RECTIFIER DIODE, SCHOTTKY, 650V
Type | Description |
---|---|
Series: | CoolSiC™+ |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 4A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 4 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 670 µA @ 650 V |
Capacitance @ Vr, F: | 130pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5400GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
|
MBRAF260T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 2A SMA-FL |
|
1N5393G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A DO204AC |
|
VBT2080S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
|
JANTXV1N4150UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
|
MBRB1045HE3_A/PVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
|
DHG60I1200HAWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 60A TO247AD |
|
BYV29B-300-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
BAS40B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
B360A-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC |
|
AS3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
|
AU3PK-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
NSB8AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |