DIODE SCHOTTKY 45V 10A TO263AB
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 840 mV @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 45 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DHG60I1200HAWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 60A TO247AD |
|
BYV29B-300-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
BAS40B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
B360A-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC |
|
AS3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
|
AU3PK-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
NSB8AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
|
1N4003T-GComchip Technology |
DIODE GEN PURP 200V 1A DO41 |
|
SL26BSURGE |
2A -60V - SMB (DO-214AA) - RECTI |
|
SDURD830TRSMC Diode Solutions |
DIODE GEN PURP 300V 8A DPAK |
|
HVP10Rectron USA |
DIODE HV ASSEMBLIED 10KV .75A |
|
NRVBB1060W1T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10A 60V D2PAK-3 |
|
DFLR1200-7Zetex Semiconductors (Diodes Inc.) |
DIODE GP 200V 1A POWERDI123 |