DIODE SCHOTTKY 20A 80V TO-263AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 700 µA @ 80 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTXV1N4150UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
|
MBRB1045HE3_A/PVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
|
DHG60I1200HAWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 60A TO247AD |
|
BYV29B-300-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
BAS40B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
B360A-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC |
|
AS3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
|
AU3PK-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
NSB8AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
|
1N4003T-GComchip Technology |
DIODE GEN PURP 200V 1A DO41 |
|
SL26BSURGE |
2A -60V - SMB (DO-214AA) - RECTI |
|
SDURD830TRSMC Diode Solutions |
DIODE GEN PURP 300V 8A DPAK |
|
HVP10Rectron USA |
DIODE HV ASSEMBLIED 10KV .75A |