DIODE AVALANCHE 800V 1.4A TO277A
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1.4A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 2.5 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | 42pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NSB8AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
|
1N4003T-GComchip Technology |
DIODE GEN PURP 200V 1A DO41 |
|
SL26BSURGE |
2A -60V - SMB (DO-214AA) - RECTI |
|
SDURD830TRSMC Diode Solutions |
DIODE GEN PURP 300V 8A DPAK |
|
HVP10Rectron USA |
DIODE HV ASSEMBLIED 10KV .75A |
|
NRVBB1060W1T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10A 60V D2PAK-3 |
|
DFLR1200-7Zetex Semiconductors (Diodes Inc.) |
DIODE GP 200V 1A POWERDI123 |
|
VS-ETH1506STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
GC02MPS12-220GeneSiC Semiconductor |
SIC DIODE 1200V 2A TO-220-2 |
|
VS-ETH1506STRRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
BAS70B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
MURS260-F1-3000HF |
DIODE GEN PURP 600V 2A DO214AA |
|
SR220HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 2A DO204AC |