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RMD1N25ES9

RMD1N25ES9

MOSFET N-CHANNEL 25V 1.1A SOT363

RMD1N25ES9

RMD1N25ES9

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Part No :

RMD1N25ES9

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 25V 1.1A SOT363
Catalog
Transistors - FETs, MOSFETs - Single
Availability
240224 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 10 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
RMD1N25ES9 is available at GangBo-ic.com, Please review product page below for detailed information, including RMD1N25ES9 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RMD1N25ES9 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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