MOSFET N-CH 600V 4A TO251-3
Type | Description |
---|---|
Series: | aMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 263 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 56.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IAUC28N08S5L230ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 28A 8TDSON-33 |
|
SIR466DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RF4E110BNTRROHM Semiconductor |
MOSFET N-CH 30V 11A HUML2020L8 |
|
FQD1N60TMRochester Electronics |
MOSFET N-CH 600V 1A DPAK |
|
STP46NF30STMicroelectronics |
MOSFET N CH 300V 42A TO-220 |
|
TPH3208PSTransphorm |
GANFET N-CH 650V 20A TO220AB |
|
PMCM4401UPE084Rochester Electronics |
P-CHANNEL MOSFET |
|
SIJ438DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 80A PPAK SO-8 |
|
EPC2034EPC |
GANFET N-CH 200V 48A DIE |
|
BSP135H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IRF430Rochester Electronics |
500V, N-CHANNEL REPETITIVE AVALA |
|
BUK9875-100A/CU115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMBF170,235Nexperia |
MOSFET N-CH 60V 300MA TO236AB |