MOSFET N-CH 1000V 2.8A TO220
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 830 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 132W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSZ028N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/40A TSDSON |
|
STFU23N80K5STMicroelectronics |
MOSFET N-CH 800V 16A TO220FP |
|
IPB097N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT47N60SC3GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A D3PAK |
|
DMT3004LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET NCH 30V 10.4A POWERDI |
|
PMH600UNEHNexperia |
MOSFET N-CH 20V 800MA DFN0606-3 |
|
BSC196N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.5A/45A TDSON |
|
FDP18N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 18A TO220-3 |
|
IXFP180N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
FQP2N60Rochester Electronics |
MOSFET N-CH 600V 2.4A TO220-3 |
|
IRFU430APBFVishay / Siliconix |
MOSFET N-CH 500V 5A TO251AA |
|
UPA2708GR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB19N20TMRochester Electronics |
MOSFET N-CH 200V 19.4A D2PAK |