RES 499K OHM 1/10W .1% AXIAL
IGBT
Type | Description |
---|---|
Series: | GenX3™ |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 75 A |
Current - Collector Pulsed (Icm): | 170 A |
Vce(on) (Max) @ Vge, Ic: | 1.4V @ 15V, 24A |
Power - Max: | 190 W |
Switching Energy: | 700µJ (on), 2.4mJ (off) |
Input Type: | Standard |
Gate Charge: | 66 nC |
Td (on/off) @ 25°C: | 18ns/300ns |
Test Condition: | 480V, 24A, 10Ohm, 15V |
Reverse Recovery Time (trr): | 26 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IGC70T120T8RQX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
IRGH4607DPBFIR (Infineon Technologies) |
IGBT 600V 8PQFN |
|
IRG4RC10SDTRPBFBTMA1IR (Infineon Technologies) |
IGBT 600V 14A 38W DPAK |
|
SIGC14T60SNCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC11T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
NGTD20T120F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 1200V DIE |
|
SIGC28T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 50A WAFER |
|
IXGT64N60B3Wickmann / Littelfuse |
DISC IGBT PT-MID FREQUENCY TO-26 |
|
SIGC42T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG7CH73K10EFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
NGTD30T120F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 1200V DIE |
|
SIGC12T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
FGAF30S65AQSanyo Semiconductor/ON Semiconductor |
IGBT 650V 30A TO-3PF |