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NGTD30T120F2WP

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IGBT TRENCH FIELD STOP 1200V DIE

NGTD30T120F2WP

NGTD30T120F2WP

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Part No :

NGTD30T120F2WP

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT TRENCH FIELD STOP 1200V DIE
Catalog
Transistors - IGBTs - Single
Availability
41308 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
NGTD30T120F2WP PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):-
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:-
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:-
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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