CAP CER 15PF 250V C0G/NP0 1808
DISC IGBT PT-MID FREQUENCY TO-26
Type | Description |
---|---|
Series: | GenX3™ |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 64 A |
Current - Collector Pulsed (Icm): | 400 A |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 50A |
Power - Max: | 460 W |
Switching Energy: | 1.5mJ (on), 1mJ (off) |
Input Type: | Standard |
Gate Charge: | 168 nC |
Td (on/off) @ 25°C: | 25ns/138ns |
Test Condition: | 480V, 50A, 3Ohm, 15V |
Reverse Recovery Time (trr): | 41 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SIGC42T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
IRG7CH73K10EFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
![]() |
NGTD30T120F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 1200V DIE |
![]() |
SIGC12T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
FGAF30S65AQSanyo Semiconductor/ON Semiconductor |
IGBT 650V 30A TO-3PF |
![]() |
APT45GR65BSCD10Microsemi |
INSULATED GATE BIPOLAR TRANSISTO |
![]() |
IHY20N120R3XKSA1IR (Infineon Technologies) |
IGBT 1200V 40A 310W TO247HC-3 |
![]() |
LGB8206ATIWickmann / Littelfuse |
IGBT 390V 20A 150W D2PAK3 |
![]() |
RJH65T04BDPMA0#T2FRenesas Electronics America |
IGBT TRENCH 650V 60A TO-3PFP |
![]() |
63-7000PBFIR (Infineon Technologies) |
IGBT 650V COPAK |
![]() |
NGTD23T120F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 1200V DIE |
![]() |
SIGC12T60NCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
IRGH4610DPBFIR (Infineon Technologies) |
IGBT 600V 8PQFN |