MOSFET N-CH 500V 10A TO220FP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 23 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 765 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 29.5W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
R6524ENZC17ROHM Semiconductor |
MOSFET N-CH 650V 24A TO3 |
![]() |
2SK3353(0)-Z-E1-AZRenesas Electronics America |
TRANSISTOR |
![]() |
IXFX30N50Wickmann / Littelfuse |
MOSFET N-CH PLUS247 |
![]() |
RJK0658DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 60V 25A 8WPAK |
![]() |
STD3155L104T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V DPAK |
![]() |
IRLC8259EBIR (Infineon Technologies) |
MOSFET N-CH WAFER |
![]() |
JANTX2N6790Microsemi |
MOSFET N-CH 200V 3.5A TO39 |
![]() |
NP60N04NUK-S18-AYRenesas Electronics America |
MOSFET N-CH 40V 60A TO262-3 |
![]() |
AUXVNGP4062D-EIR (Infineon Technologies) |
IC DISCRETE |
![]() |
TPCA8031-H(TE12L,QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 24A 8SOP |
![]() |
UPA1902TE-T1-ARenesas Electronics America |
TRANSISTOR |
![]() |
RJK0655DPB-WS#J5Renesas Electronics America |
IGBT |
![]() |
JANTX2N6800Microsemi |
MOSFET N-CH 400V 3A TO205AF |