CAP ALUM 6.8UF 20% 50V RADIAL
LENS CLEAR 12DEG SPOT ADH SCRW
THERM PAD 640MMX320MM YELLOW
MOSFET N-CH 200V 3.5A TO39
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/555 |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-39 |
Package / Case: | TO-205AF Metal Can |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NP60N04NUK-S18-AYRenesas Electronics America |
MOSFET N-CH 40V 60A TO262-3 |
|
AUXVNGP4062D-EIR (Infineon Technologies) |
IC DISCRETE |
|
TPCA8031-H(TE12L,QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 24A 8SOP |
|
UPA1902TE-T1-ARenesas Electronics America |
TRANSISTOR |
|
RJK0655DPB-WS#J5Renesas Electronics America |
IGBT |
|
JANTX2N6800Microsemi |
MOSFET N-CH 400V 3A TO205AF |
|
N0609N-S19-AY#YWRenesas Electronics America |
MOSFET N-CHANNEL |
|
IRFC3415BIR (Infineon Technologies) |
MOSFET 150V 43A DIE |
|
AO8807LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 8TSSOP |
|
94-2312PBFIR (Infineon Technologies) |
IC MOSFET |
|
MT8386M5Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V |
|
AOTF12N50_007Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
|
CMPDM303NH BKCentral Semiconductor |
MOSFET N-CH 30V 3.6A SOT23F |