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IHB4EB682K

IHB4EB682K

FIXED IND 6.8MH 1.1A 1.76 OHM TH

R6524ENZC17

R6524ENZC17

MOSFET N-CH 650V 24A TO3

R6524ENZC17

R6524ENZC17

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Part No :

R6524ENZC17

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 650V 24A TO3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
148614 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id:4V @ 750µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.65 nF @ 25 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-3P-3 Full Pack
R6524ENZC17 is available at GangBo-ic.com, Please review product page below for detailed information, including R6524ENZC17 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6524ENZC17 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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