MOSFET N-CH 55V 4-PIN
Type | Description |
---|---|
Series: | HTMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3 nC @ 5 V |
Vgs (Max): | 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 28 V |
FET Feature: | - |
Power Dissipation (Max): | 50W (Tj) |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPA1716G-E1-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVMFS6H864NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/22A 5DFN |
|
TK33S10N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 33A DPAK |
|
2SJ325-Z-AZRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
RFW2N06RLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFL1N15Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS10N3D2CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 151A POWER56 |
|
2SK2935-92-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0358DSP-01#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MMIX1F132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 63A 24SMPD |
|
IPP65R190CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
AUIRFS3006-7P-IRRochester Electronics |
PFET, 240A I(D), 60V, 0.0021OHM, |
|
NVMFS6H848NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/59A 5DFN |