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NVMFS6H864NLWFT1G

NVMFS6H864NLWFT1G

MOSFET N-CH 80V 7A/22A 5DFN

NVMFS6H864NLWFT1G

NVMFS6H864NLWFT1G

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Part No :

NVMFS6H864NLWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 7A/22A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:431 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NVMFS6H864NLWFT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFS6H864NLWFT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFS6H864NLWFT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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