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IPP65R190CFD7XKSA1

IPP65R190CFD7XKSA1

HIGH POWER_NEW

IPP65R190CFD7XKSA1

IPP65R190CFD7XKSA1

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Part No :

IPP65R190CFD7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
HIGH POWER_NEW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
766376 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:CoolMOS™ CFD7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP65R190CFD7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP65R190CFD7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP65R190CFD7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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