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MOSFET N-CH 1000V 4.3A TO263AB

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RF1S4N100SM9A

RF1S4N100SM9A

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Part No :

RF1S4N100SM9A

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 1000V 4.3A TO263AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10187 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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