TRANS SJT N-CH 1200V 31A TO247-3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 110mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: | 4.3V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 56 nC @ 20 V |
Vgs (Max): | +25V, -15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1670 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 178W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIPC05N80C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
SFT1407-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
STU6N65M2-SSTMicroelectronics |
MOSFET N-CH 650V 4A IPAK |
|
SSM3J09FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 200MA USM |
|
IRL40S212ARMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
DMP2042UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.6A U-WLB1010-4 |
|
DMT2004UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |
|
RLD03N06CLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03J4DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
SPP11N60S5XKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
RJK4512DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
JDX6002Rochester Electronics |
NFET T0220FP JPN |
|
BSC090BNSRochester Electronics |
N-CHANNEL POWER MOSFET |