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STU6N65M2-S

STU6N65M2-S

MOSFET N-CH 650V 4A IPAK

STU6N65M2-S

STU6N65M2-S

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Part No :

STU6N65M2-S

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 4A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
636163 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
Type Description
Series:MDmesh™ M2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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