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IRL40S212ARMA1

IRL40S212ARMA1

MOSFET N-CH 40V 195A D2PAK

IRL40S212ARMA1

IRL40S212ARMA1

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Part No :

IRL40S212ARMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 195A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
656165 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:HEXFET®, StrongIRFET™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:4.5 V @ 137 nC
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 V @ 8320 pF
FET Feature:-
Power Dissipation (Max):231W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL40S212ARMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IRL40S212ARMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRL40S212ARMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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