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SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

MOSFET N-CH 600V 23A PPAK 8 X 8

SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

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Part No :

SIHH125N60EF-T1GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 23A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13050 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:EF
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1533 pF @ 100 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN
SIHH125N60EF-T1GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHH125N60EF-T1GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHH125N60EF-T1GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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