MOSFET P-CHANNEL 30V 82A ATPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.4mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 76 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3950 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 72W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ATPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RJK03E1DNS-00#J5Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRF543Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTV32N20ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2529-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI4953DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
2SK544ERochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
SIR826DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
IRF632Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NE5550779A-T1A-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP052NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03E0DNS-02#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ463A(91)-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
IRFBC40RRochester Electronics |
N-CHANNEL POWER MOSFET |