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RJK03E1DNS-00#J5

RJK03E1DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

2SK2529-90-E

2SK2529-90-E

N-CHANNEL POWER MOSFET

RJK03E1DNS-00#J5

RJK03E1DNS-00#J5

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Part No :

RJK03E1DNS-00#J5

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
80000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:6.9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:10.7 nC @ 4.5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 10 V
FET Feature:-
Power Dissipation (Max):15W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HWSON (3.3x3.3)
Package / Case:8-PowerWDFN
RJK03E1DNS-00#J5 is available at GangBo-ic.com, Please review product page below for detailed information, including RJK03E1DNS-00#J5 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RJK03E1DNS-00#J5 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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