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SPP03N60C3HKSA1

SPP03N60C3HKSA1

MOSFET N-CH 650V 3.2A TO220-3

4MA161133Z3BACTGI

4MA161133Z3BACTGI

MEMS OSC XO 161.1330MHZ LVPECL

SPP03N60C3HKSA1

SPP03N60C3HKSA1

Image is for reference, please contact us to get the real picture

Part No :

SPP03N60C3HKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 3.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
917491 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
SPP03N60C3HKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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