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IPP80N06S2LH5AKSA1

IPP80N06S2LH5AKSA1

MOSFET N-CH 55V 80A TO220-3

IPP80N06S2LH5AKSA1

IPP80N06S2LH5AKSA1

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Part No :

IPP80N06S2LH5AKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
047504 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPP80N06S2LH5AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP80N06S2LH5AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP80N06S2LH5AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP80N06S2LH5AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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