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SI8417DB-T2-E1

SI8417DB-T2-E1

MOSFET P-CH 12V 14.5A 6MICROFOOT

SI8417DB-T2-E1

SI8417DB-T2-E1

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Part No :

SI8417DB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 14.5A 6MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
957495 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
SI8417DB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:21mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 6 V
FET Feature:-
Power Dissipation (Max):2.9W (Ta), 6.57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-Micro Foot™ (1.5x1)
Package / Case:6-MICRO FOOT®CSP
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