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STI23NM60N

STI23NM60N

MOSFET N-CH 600V 19A I2PAK

STI23NM60N

STI23NM60N

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Part No :

STI23NM60N

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 19A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
565956 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
STI23NM60N PDF
Type Description
Series:MDmesh™ II
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 50 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI23NM60N is available at GangBo-ic.com, Please review product page below for detailed information, including STI23NM60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI23NM60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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