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IRFS23N20DPBF

IRFS23N20DPBF

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IRFS23N20DPBF

IRFS23N20DPBF

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Part No :

IRFS23N20DPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 24A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
665966 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRFS23N20DPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS23N20DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS23N20DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS23N20DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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