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IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

IPL65R190E6AUMA1

IPL65R190E6AUMA1

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Part No :

IPL65R190E6AUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 20.2A 4VSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
625962 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
IPL65R190E6AUMA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-VSON-4
Package / Case:4-PowerTSFN
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