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IPP12CN10NGXKSA1

IPP12CN10NGXKSA1

MOSFET N-CH 100V 67A TO220-3

IPP12CN10NGXKSA1

IPP12CN10NGXKSA1

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Part No :

IPP12CN10NGXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 67A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
165516 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
IPP12CN10NGXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4320 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP12CN10NGXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP12CN10NGXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP12CN10NGXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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