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FDME410NZT

FDME410NZT

MOSFET N-CH 20V 7A MICROFET

FDME410NZT

FDME410NZT

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Part No :

FDME410NZT

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 7A MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
225522 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FDME410NZT PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:26mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1025 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MicroFet 1.6x1.6 Thin
Package / Case:6-PowerUFDFN
FDME410NZT is available at GangBo-ic.com, Please review product page below for detailed information, including FDME410NZT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDME410NZT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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