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IPD06P004NSAUMA1

IPD06P004NSAUMA1

MOSFET P-CH 60V 16.4A TO252

IPD06P004NSAUMA1

IPD06P004NSAUMA1

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Part No :

IPD06P004NSAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 16.4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
185518 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P004NSAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD06P004NSAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD06P004NSAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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