MOSFET N-CH 30V 11A 8SO
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.9mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 760 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF840ASVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
SPP80N06S08NKIR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
PMPB50ENEAXNexperia |
MOSFET N-CH 30V 5.1A DFN2020MD-6 |
|
STW20NB50STMicroelectronics |
MOSFET N-CH 500V 20A TO247-3 |
|
SI4845DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 8SO |
|
STP8NM60STMicroelectronics |
MOSFET N-CH 650V 8A TO220AB |
|
DMN63D1L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
|
BUK9518-55,127NXP Semiconductors |
MOSFET N-CH 55V 57A TO220AB |
|
SIA467EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 31A PPAK SC70-6 |
|
2SK2507(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 50V 25A TO220NIS |
|
IRFBG20LVishay / Siliconix |
MOSFET N-CH 1000V 1.4A I2PAK |
|
IRF7402TRIR (Infineon Technologies) |
MOSFET N-CH 20V 6.8A 8SO |
|
FDB8860-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |