MOSFET N-CH 55V 57A TO220AB
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 18mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIA467EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 31A PPAK SC70-6 |
|
2SK2507(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 50V 25A TO220NIS |
|
IRFBG20LVishay / Siliconix |
MOSFET N-CH 1000V 1.4A I2PAK |
|
IRF7402TRIR (Infineon Technologies) |
MOSFET N-CH 20V 6.8A 8SO |
|
FDB8860-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |
|
AO6085N03Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 11A/50A 8DFN |
|
NTD4905NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A/67A DPAK |
|
AON7702BAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13.5A/20A 8DFN |
|
STB130NS04ZBT4STMicroelectronics |
MOSFET N-CH 33V 80A D2PAK |
|
SI7382DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 14A PPAK SO-8 |
|
SUP65P04-15-E3Vishay / Siliconix |
MOSFET P-CH 40V 65A TO220AB |
|
RSS065N06FU6TBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
STI23NM60NDSTMicroelectronics |
MOSFET N-CH 600V 19.5A I2PAK |