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IRFBG20L

IRFBG20L

MOSFET N-CH 1000V 1.4A I2PAK

IRFBG20L

IRFBG20L

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Part No :

IRFBG20L

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 1000V 1.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
473947 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 21 - Nov 25 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFBG20L is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBG20L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBG20L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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