MOSFET N-CH 600V 10A TO220
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 700mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1595 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQA7N90MSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 7A TO3P |
|
IRFSL7437TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO262 |
|
HAT2166HWS-ERenesas Electronics America |
MOSFET N-CH 30V 45A 5LFPAK |
|
NVMFS6B03NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 132A 5DFN |
|
IRF3710LIR (Infineon Technologies) |
MOSFET N-CH 100V 57A TO262 |
|
IRF6623TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
SI7774DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IPB100N06S3L-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
AO4447A_201Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 18.5A 8SOIC |
|
SI5913DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4A 1206-8 |
|
SPB35N10TIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO263-3 |
|
IRFZ24LVishay / Siliconix |
MOSFET N-CH 60V 17A TO262-3 |
|
2SK3820-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 26A TO263-2 |