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SPB35N10T

SPB35N10T

MOSFET N-CH 100V 35A TO263-3

SPB35N10T

SPB35N10T

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Part No :

SPB35N10T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 35A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
123912 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 01 - Mar 05 2025
PDF
SPB35N10T PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB35N10T is available at GangBo-ic.com, Please review product page below for detailed information, including SPB35N10T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB35N10T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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