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SI5913DC-T1-E3

SI5913DC-T1-E3

MOSFET P-CH 20V 4A 1206-8

SI5913DC-T1-E3

SI5913DC-T1-E3

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Part No :

SI5913DC-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 4A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
113911 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 01 - Mar 05 2025
PDF
SI5913DC-T1-E3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:84mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.7W (Ta), 3.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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